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China reportedly builds working 3nm transistors without EUV

Tom's Hardware says the stacked-nanosheet approach targets 3nm, but a full 3nm manufacturing process remains years away.

Tom's HardwareTH
1 Source, 20d ago, first seen 20d ago

TLDR

Tom's Hardware reports that China has made working gate-all-around transistors targeting 3nm without extreme ultraviolet (EUV) lithography. The transistors use stacked nanosheets, but the outlet says a full 3nm manufacturing process is still years away.

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1 Source, first seen 20d ago

34 likes6 saves2 reposts

Combined views

3.7K

1 Source, first seen 20d ago

34 likes6 saves2 reposts

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1 Source

Tom's Hardware@tomshardwareChina crafts working 3nm gate-all-around transistors without EUV — stacked nanosheets target 3nm without EUV, but full node remains distant https://www.tomshardware.com/tech-industry/china-crafts-working-3nm-gate-all-around-transistors-without-euv-stacked-nanosheets-target-3nm-without-euv-but-full-node-remains-distant20d
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    1 Source

    Tom's Hardware@tomshardwareChina crafts working 3nm gate-all-around transistors without EUV — stacked nanosheets target 3nm without EUV, but full node remains distant https://www.tomshardware.com/tech-industry/china-crafts-working-3nm-gate-all-around-transistors-without-euv-stacked-nanosheets-target-3nm-without-euv-but-full-node-remains-distant20d
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