Report
Wolfspeed introduces Premium 200 mm silicon carbide substrate
eeNews Europe reports the n-type substrate is designed to reduce defects and improve wafer shape stability. It has fewer than 0.01 micropipes per square centimeter, or fewer than three per wafer.
TLDR
eeNews Europe reports Wolfspeed introduced a Premium 200 mm n-type silicon carbide (SiC) substrate designed to reduce defects and improve wafer shape stability. Wolfspeed is targeting higher manufacturing yields as SiC power devices move toward higher voltages and larger die sizes. The substrate has fewer than 0.01 micropipes per square centimeter, or fewer than three per wafer.
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