TechChina’s new transistors reportedly enable 3nm-like performance, with limits on density
Wccftech reports that the Chinese Academy of Sciences’ GAA transistors achieved on-off ratios above 500,000, while metal connections still limit density gains.
TLDR
Wccftech reports that China has developed gate-all-around (GAA) transistors that enable 3nm node-like performance using deep-ultraviolet (DUV) lithography. The report includes an important constraint: metal connections still limit density gains, and MEOL constraints provide only a path to 5nm node-equivalent performance.
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China’s new transistors reportedly enable 3nm-like performance, with limits on density
Wccftech reports that the Chinese Academy of Sciences’ GAA transistors achieved on-off ratios above 500,000, while metal connections still limit density gains.
TLDR
Wccftech reports that China has developed gate-all-around (GAA) transistors that enable 3nm node-like performance using deep-ultraviolet (DUV) lithography. The report includes an important constraint: metal connections still limit density gains, and MEOL constraints provide only a path to 5nm node-equivalent performance.