Announcement
SK hynix's 3D FeNAND research explores computing inside NAND
SK hynix says co-optimizing cell, non-cell and page schemes could improve throughput and energy efficiency.
TLDR
SK hynix says its 3D FeNAND research, presented at IEEE IEDM 2025, co-optimizes cell, non-cell and page schemes for analog compute-in-memory. The company says the work aims to improve throughput and energy efficiency, exploring how NAND could do more than store data.
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