Wccftech reports Naura's two-step fluorine process targets SiGe layers without damaging silicon.
Wccftech posted that Chinese equipment firm Naura claims a breakthrough process. The method uses two-step fluorine etching to target SiGe layers without harming silicon. Wccftech states this opens a path to 3D DRAM production without advanced lithography. The tweet notes the approach could help CXMT overcome EUV sanctions. The attached article summary repeats the same claim about vertical stacking. Visible posts contain no further details or independent verification of the process.
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Wccftech reports Naura's two-step fluorine process targets SiGe layers without damaging silicon.
Wccftech posted that Chinese equipment firm Naura claims a breakthrough process. The method uses two-step fluorine etching to target SiGe layers without harming silicon. Wccftech states this opens a path to 3D DRAM production without advanced lithography. The tweet notes the approach could help CXMT overcome EUV sanctions. The attached article summary repeats the same claim about vertical stacking. Visible posts contain no further details or independent verification of the process.
Wccftech@wccftechChinese firm Naura claims big breakthrough that could enable CXMT to overcome EUV sanctions and make 3D DRAM chips. 🔗 https://wccf.tech/1l6i6
Wccftech@wccftechChinese firm Naura claims big breakthrough that could enable CXMT to overcome EUV sanctions and make 3D DRAM chips. 🔗 https://wccf.tech/1l6i6
