Naura Claims Breakthrough for 3D DRAM Chips

Wccftech posted that Chinese equipment firm Naura claims a breakthrough process. The method uses two-step fluorine etching to target SiGe layers without harming silicon. Wccftech states this opens a path to 3D DRAM production without advanced lithography. The tweet notes the approach could help CXMT overcome EUV sanctions. The attached article summary repeats the same claim about vertical stacking. Visible posts contain no further details or independent verification of the process.