Interesting

"The key change is the adoption of molybdenum (Mo). Part of the tungsten (W) film used previously has been replaced with molybdenum. NAND increases capacity by vertically stacking hundreds of layers of charge-storing cells and the word lines that control them. At 375 layers, SK Hynix decided to switch part of the word line material — the metal gate electrodes controlling each cell layer — from tungsten to molybdenum."

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@jukan05 TEL grabbing kokusai's lunch 😞

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@zephyr_z9 $ENTG ab to absolutely cook tbh with this news

@zephyr_z9 I think that Kokusai keeps benefiting from the extra layering, even if Lam or TEL share the Mo socket.

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Super high-aspect-ratio hole etching (Lam's domain) is always the spotlight, but the physical warpage control of depositing uniform Oxide/Nitride pairs across hundreds of layers under high vacuum is becoming the ultimate thermodynamic bottleneck for 375-layer 3D-NAND.

@jukan05 Do you think SK Hynix’s selection of TEL over competing ALD/CVD vendors reflects a fundamental shift toward superior stress/thermal governance over raw throughput in this micro-scaling era?

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375-layer NAND headlines $TEL, but the real tell is $LRCX . You can’t build 375 layers without an etch tool drilling holes cleanly through every one of them, and Lam owns that ultra‑deep 3D NAND etch step with no realistic substitute, so every new TEL deposition win at these heights is implicitly a structural win, and widening moat, for $LRCX.

@zephyr_z9 interesting as a tech read but 375 layers seems like a lot to stack on faith

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