TechChinese scientists reportedly achieve 10 billion memory writing cycles
TechRadar describes the result as a 100-fold improvement in memory endurance and says the work centers on ferroelectrics.
TLDR
TechRadar reports that Chinese scientists achieved 10 billion writing cycles in a memory-endurance advance involving ferroelectrics. The outlet describes a 100-fold improvement in endurance.
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Chinese scientists reportedly achieve 10 billion memory writing cycles
TechRadar describes the result as a 100-fold improvement in memory endurance and says the work centers on ferroelectrics.
TLDR
TechRadar reports that Chinese scientists achieved 10 billion writing cycles in a memory-endurance advance involving ferroelectrics. The outlet describes a 100-fold improvement in endurance.