Wafer-scale growth of high-mobility p-type boron carbon nitride
Nature says a dual-precursor chemical system was used to achieve wafer-scale epitaxial growth of the p-type semiconductor.
TLDR
Nature shared a research paper on wafer-scale epitaxial growth of high-mobility p-type boron carbon nitride. Its linked description says a dual-precursor chemical system was used and describes the material as a high-performance p-type semiconductor.
Combined views
13.2K
1 Source, first seen 10h ago
22 likes1 comments6 saves2 reposts