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Samsung reportedly building D0a DRAM around wafer-to-wafer hybrid bonding
SemiAnalysis said in October 2026 commercialization was roughly two years away; the process does nothing for die-to-wafer bonding.
TLDR
SemiAnalysis said in October 2026 that Samsung was reportedly building D0a, its first sub-10nm-class DRAM node, around wafer-to-wafer hybrid bonding. It described the device-layer process as using a different tool set, with commercialization roughly two years away, and said it does nothing for die-to-wafer (D2W) bonding. SemiAnalysis remained bearish on D2W until logic stacking ramps and HBM hybrid bonding is fully out of “Street numbers.”
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