Samsung reportedly building D0a DRAM around wafer-to-wafer hybrid bonding

SemiAnalysis said in October 2026 that Samsung was reportedly building D0a, its first sub-10nm-class DRAM node, around wafer-to-wafer hybrid bonding. It described the device-layer process as using a different tool set, with commercialization roughly two years away, and said it does nothing for die-to-wafer (D2W) bonding. SemiAnalysis remained bearish on D2W until logic stacking ramps and HBM hybrid bonding is fully out of “Street numbers.”