physorg.com — "According to Professor Peter Ashburn who undertook this research in collaboration with STC Microelectronics, the researchers used a standard silicon bipolar technique with fluorine implants to deliver a record fT of 110 GHz which is twice as fast as the current record."
Aug 16, 2006 View in Crawl 4
geminitojanusAug 16, 2006
Wait.. didn't IBM just set the record for a 500GHz transistor not even maybe two months ago?
erasmus354Aug 17, 2006
IBM and Georgia Tech made a Si-Ge transistor that ran at 500GHz, so yes this is a totally pointless article. I like how at the bottom there is a link to a discussion about this technique being better than Si-Ge lol, when it has already been beaten 5 times over.
snurfleAug 17, 2006
oops. bad update. dig it down. sorry.
trogdor282Aug 17, 2006
Yes, the actual physics is an achievement, but the article title is completely bogus. Go journalists!!
stuffhappensAug 17, 2006
A transistor set - as in 'radio'?Well, you can start with zero (crystal set - diode only)Go to one for a crystal set with a simple amplifierTwo for a crystal set with a better amplifierStart at five or six for a basic 'superhet' design.There you go!
Closed AccountAug 17, 2006
@maxter:Interesting link... it also says: "Computer simulations suggest that the silicon-germanium (SiGe) technology used in the chip could ultimately support even higher (near-TeraHertz ? 1,000 GHz) operational frequencies even at room temperature."
colonelpanicAug 19, 2006
Hold on......Why does operating frequency matter that much to some people? Is'nt the effeciency of the device more important? Last I checked this is why a 2.0Ghtz Athlon 64 X2 could kick a 3.0Ghtz Pentium D dual cores ass. Higher operation frequency does not necassarily equal performance.
zoombusaAug 24, 2006
thx. exactly what i was looking for.